Characterization of GaN HEMTs' Aging Precursors and Activation Energy under a Wide-Range of Thermal Cycling Tests

In this paper, 650 V / 7.5 A rated enhancement-mode (E-mode) Gallium Nitride (GaN) high-electron-mobility-transistors (HEMTs) with integrated gate drivers are characterized under thousands of accelerated thermal cycles (ATC) at different junction temperature stresses. This research helps in developing fundamental insights into GaN HEMTs' aging characteristics through the degradation ten devices ATC tests. For over 20,000 cycles, forward and reverse conduction losses, I GSS, xmlns:xlink="http://www.w3.org/1999/xlink">C oss, xmlns:xlink="http://www.w3.org/1999/xlink">RDS on experimentally measured to identify parameter shifts corresponding precursors. Results indicate that both xmlns:xlink="http://www.w3.org/1999/xlink">IGSS oss do not deviate much, but values on, losses vary considerably device aging. paper also presents an empirical method estimate correlation between acceleration factors FETs' process cycling conditions. The value activation energy tested HEMT is derived using equations be about 1.13 eV applied stress factors. study finds HEMTs age facilitates a reasonable failure mechanisms, which further reliability improvement.